Possible centers of broadband near-IR luminescence in bismuth-doped solids: $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$

TL;DR

This paper investigates potential bismuth-related centers responsible for broadband near-IR luminescence in doped solids, using quantum-chemical modeling and experimental data to identify possible luminescent centers.

Contribution

It identifies and analyzes subvalent bismuth centers such as $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$ as potential sources of near-IR luminescence in bismuth-doped materials.

Findings

Subvalent bismuth centers can produce broadband near-IR luminescence.

Quantum-chemical modeling supports the experimental identification of luminescent centers.

Different bismuth centers have distinct luminescent properties.

Abstract

Subvalent bismuth centers (interstitial $Bi^{+}$ ion, Bi$_5^{3+}$ cluster ion, and Bi$_4^0$ cluster) are examined as possible centers of broadband near-IR luminescence in bismuth-doped solids on the grounds of quantum-chemical modeling and experimental data.