Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars

TL;DR

This paper presents a novel method to induce controllable nonuniform strain in graphene using dielectric nanopillars, enabling potential band gap engineering in graphene-based devices.

Contribution

The authors develop a technique to apply and control nonuniform strain in graphene via dielectric nanopillars, demonstrated through Raman spectroscopy and SEM imaging.

Findings

Maximum graphene stretch reaches about 20%.

Strain pattern can be controlled by pillar size and separation.

Technique enables potential band gap formation in graphene.

Abstract

A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman spectroscopy as well as from scanning electron microscopy (SEM) images. From SEM images, the maximum stretch of the graphene film reaches about 20%. This technique can be applied to the formation of band gaps in graphene.