Application of elastic mid-IR-laser-light scattering for non-destructive inspection in microelectronics
V. P. Kalinushkin, V. A. Yuryev, O. V. Astafiev, A. N. Buzynin, N. I., Bletskan
TL;DR
This paper discusses the use of elastic mid-IR-light scattering for non-destructive inspection of semiconductor materials, highlighting its potential for defect detection and quality control in microelectronics.
Contribution
It introduces recent methods based on mid-IR-light scattering for non-destructive evaluation of microelectronic structures and discusses their practical applications.
Findings
Potential for defect detection in semiconductors
Useful for quality monitoring in microelectronics industry
Applicable in both research and industrial settings
Abstract
Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and quality monitoring both in research laboratories and the industry of microelectronics
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