Efficient resistive memory effect on SrTiO3 by ionic-bombardment

TL;DR

This paper introduces ionic-bombardment as a novel method to induce resistive memory effects in SrTiO3, achieving larger resistance differences and enabling spatially-selective memory creation, expanding the toolkit beyond traditional doping and thermal reduction.

Contribution

The study demonstrates ionic-bombardment as an effective new technique for creating resistive memory in SrTiO3 with significantly enhanced resistance contrast.

Findings

Resistance difference of two orders of magnitude between high and low states

Ionic-bombardment achieves larger resistance change than thermal reduction

Method allows for spatially-selective memory patterning

Abstract

SrTiO3 is known to exhibit resistive memory effect either with cation-doping or with high-temperature thermal reduction. Here, we add another scheme, ionic-bombardment, to the list of tools to create resistive memory effect on SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance difference was observed between the high and low resistive states, which is an order of magnitude larger than those achieved by the conventional thermal reduction process. One of the advantages of this new scheme is that it can be easily combined with lithographic processes to create spatially-selective memory effect.