Large-scale defect accumulations in Czochralski-grown silicon

TL;DR

This paper investigates large-scale impurity accumulations in Czochralski-grown silicon using IR-light scattering and electron-beam techniques, revealing distinct formation mechanisms and proposing a new model for these impurity structures.

Contribution

It introduces a classification and a new formation model for large-scale impurity accumulations in CZ silicon, differing from known impurity clouds in FZ silicon.

Findings

Identified different nature of impurity accumulations in CZ silicon

Analyzed point centers forming these accumulations

Proposed a new model for impurity accumulation formation

Abstract

Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a FZ-grown silicon. A classification of the large-scale impurity accumulations in CZ Si is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si is also proposed. In addition, the images of the large-scale impurity accumulations obtained by means of the scanning mid-IR-laser microscopy are demonstrated.