Application of elastic mid-IR light scattering for inspection of internal gettering operations

TL;DR

This paper introduces a novel method using law-angle mid-IR-light scattering (LALS) to directly inspect the efficiency and stability of internal gettering in CZ silicon semiconductor manufacturing.

Contribution

The paper develops and demonstrates a new LALS-based technique for direct inspection of internal gettering processes in semiconductor crystals.

Findings

LALS effectively detects defect accumulations related to gettering.

The method provides stable and reliable measurements.

It enhances understanding of gettering efficiency.

Abstract

Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of the internal gettering efficiency and stability have been practically absent thus far. The purpose of this paper is to present such a method developed on the basis of law-angle mid-IR-light scattering technique (LALS), which has been successfully applied thus far for the investigation of large-scale electrically active defect accumulations (LSDAs) in semiconductor crystals.