Raman signature of electron-electron correlation in chemically doped few-layer graphene
Matteo Bruna, Stefano Borini

TL;DR
This study uses Raman spectroscopy to investigate how chemical doping affects electron-electron interactions in few-layer graphene, revealing changes in the 2D band related to electron correlation effects.
Contribution
It provides experimental evidence linking electron-electron correlation to Raman spectral features in chemically doped few-layer graphene.
Findings
Reduction in 2D band splitting with doping
Decrease in 2D band area with doping
Electron-electron correlation influences electron-phonon coupling
Abstract
We report an experimental Raman study of few-layer graphene after chemical doping achieved by a plasma process in CHF gas. A systematic reduction of both the splitting and the area of the 2D band is observed with increasing the doping level. Both effects can be ascribed to the electron-electron correlation, which on the one hand reduces the electron-phonon coupling strength, and on the other hand affects the probability of the double resonant Raman process.
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