Facile fabrication of lateral nanowire wrap-gate devices with improved performance

TL;DR

This paper introduces a straightforward fabrication method for lateral nanowire wrap-gate devices that achieves high capacitive coupling and mobility, using a single resist-spinning step without chemical etching, resulting in improved device performance.

Contribution

The authors develop a simple, efficient fabrication process for lateral nanowire wrap-gate devices that enhances their electrical performance compared to prior methods.

Findings

Achieved subthreshold slope of 5-54 mV/decade

Mobility of 2800-2500 cm^2/Vs, higher than previous devices

Barrier height proportional to wrap-gate voltage

Abstract

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.