Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors

TL;DR

This paper introduces a novel optical beam-induced scattering technique using mid-IR laser microscopy for non-destructive defect detection in semiconductor surfaces and interfaces, with potential for bulk analysis and industrial quality control.

Contribution

It presents a new scattering mode in mid-IR laser microscopy for defect investigation, enhancing non-destructive analysis of semiconductor wafers and potentially improving industrial quality monitoring.

Findings

Effective detection of recombination-active defects near surfaces and interfaces

Comparable to EBIC but with unique advantages for non-destructive testing

Versatile application for laboratory and industrial defect analysis

Abstract

This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy. The technique in its present form is designed for investigation of large-scale recombination-active defects in near-surface and near-interface regions of semiconductor wafers. However, it can be easily modified for the defect investigations in the crystal bulk. Being in many respects analogous to EBIC, the present technique has some indisputable advantages, which enable its application for both non-destructive laboratory investigations and quality monitoring in the industry.