Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors

TL;DR

This paper presents a non-destructive mid-IR-laser microscopy technique for investigating defects in bulk semiconductors, capable of detecting electrically-active defects and doped regions without complex sample preparation.

Contribution

It introduces a novel mid-IR-laser microscopy method that enables defect investigation in semiconductors without the need for Schottky barriers or p-n junctions.

Findings

Effective detection of electrically-active defects

Ability to study doped domains in semiconductor structures

Non-destructive and requires minimal sample preparation

Abstract

A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a mid-IR-laser microscope---being sensitive to accumulations of free carriers enables the study of both accumulations of electrically-active defects or impurities in bulk semiconductors and doped domains in semiconductor structures. The optical beam induced scattering mode of this microscope is designed for the investigation of recombination-active defects but unlike EBIC it requires neither Schottky barrier or p--n junction nor special preparation of samples