Spin excitations of the correlated semiconductor FeSi probed by THz radiation
V. V. Glushkov, B. P. Gorshunov, E. S. Zhukova, S. V. Demishev, A. A., Pronin, N. E. Sluchanko, S. Kaiser, M. Dressel

TL;DR
This study investigates the spin excitations in FeSi using THz radiation, revealing spin-polaronic states and their relation to magnetic properties and spin fluctuations in this correlated semiconductor.
Contribution
It provides direct optical evidence of spin-polaronic states in FeSi and links their formation to spin fluctuations and magnetic phase behavior.
Findings
Broad absorption peak at 32 cm^{-1} develops below 20 K
Spin excitations split by an exchange field of 34 T
Spin fluctuations influence the magnetic phase diagram
Abstract
By direct measurements of the complex optical conductivity of FeSi we have discovered a broad absorption peak centered at frequency that develops at temperatures below 20 K. This feature is caused by spin-polaronic states formed in the middle of the gap in the electronic density of states. We observe the spin excitations between the electronic levels split by the exchange field of . Spin fluctuations are identified as the main factor determining the formation of the spin polarons and the rich magnetic phase diagram of FeSi.
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