Photosensitivity at 1550 nm and Bragg grating inscription in As2Se3 microwires

TL;DR

This paper demonstrates photosensitivity and Bragg grating inscription in As2Se3 microwires at 1550 nm, showing potential for tunable photonic devices using this chalcogenide glass.

Contribution

First experimental observation of photosensitivity and Bragg grating inscription in As2Se3 at 1550 nm, with analysis of thresholds and tunability under strain.

Findings

Photosensitivity observed at 1550 nm in As2Se3 glass.

Successful inscription of Bragg gratings using 1550 nm laser.

Bragg gratings are tunable under applied strain.

Abstract

We report the first experimental observation of photosensitivity in As2Se3 glass at a wavelength of 1550 nm. We utilize this photosensitivity to induce the first Bragg gratings using a laser source at a wavelength of 1550 nm. We quantify the photosensitivity thresholds related to exposition intensity and exposition time. Finally, we demonstrate that As2Se3 Bragg gratings are widely tunable in wavelength as the microwire can withstand an applied longitudinal strain of 4 \times 104 \mu{\epsilon}.