Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots
Muhammad Usman, Tomoya Inoue, Yukihiro Harda, Gerhard Klimeck, and, Takashi Kita

TL;DR
This study combines experimental measurements and atomistic simulations to analyze the polarization response of multi-layer InAs/GaAs quantum dot stacks, revealing anisotropic TE responses and factors influencing isotropic polarization.
Contribution
It provides a detailed atomistic analysis of polarization in multi-layer quantum dot stacks, explaining experimental isotropic polarization and revealing TE anisotropy due to hole wave function orientation.
Findings
Degree of polarization follows experimental trends
TE response is anisotropic in-plane
Isotropic polarization arises from band mixing and wave function alignment
Abstract
Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. Here we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum dot layers by linearly polarized PL measurements and by carrying out a systematic set of multi-million atom simulations. The atomistic modeling and simulations allow us to include correct symmetry properties in the calculations of the optical spectra: a factor critical to explain the experimental evidence. The values of the degree of polarization (DOP) calculated from our model follows the trends of the experimental data. We also present detailed physical insight by examining strain profiles, band edges diagrams and wave function plots. Multi-directional PL measurements and calculations of the DOP reveal…
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