Laser emission with excitonic gain in a ZnO planar microcavity
Thierry Guillet (L2C), Christelle Brimont (L2C), Pierre Valvin (L2C),, Bernard Gil (L2C), Thierry Bretagnon (L2C), F. Medard (LASMEA), Martine, Mihailovic (LASMEA), Jes\'us Z\'u\~niga-P\'erez (CRHEA), Mathieu Leroux, (CRHEA), F. Semond (CRHEA), Sophie Bouchoule (LPN)

TL;DR
This paper demonstrates laser emission from a ZnO planar microcavity across a temperature range, revealing excitonic gain mechanisms and a transition from strong to weak coupling regimes.
Contribution
It provides the first observation of excitonic gain in a ZnO microcavity and details the temperature-dependent coupling regime transition.
Findings
Lasing observed from 80 K to 300 K
Gain-related transition occurs below 240 K
Transition from strong to weak coupling at laser threshold
Abstract
The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
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