High-Transconductance Graphene Solution-Gated Field Effect Transistors

TL;DR

This paper demonstrates high transconductance in graphene solution-gated FETs, highlighting their superior sensitivity and potential for biosensing applications in electrolytic environments.

Contribution

It reports on the fabrication and characterization of large-area graphene SGFETs with high transconductance, comparing epitaxial and CVD graphene, and establishing their advantages over other SGFETs.

Findings

High transconductance achieved in graphene SGFETs

Graphene SGFETs outperform other SGFET technologies in sensitivity

Both epitaxial and CVD graphene are effective for SGFET fabrication

Abstract

In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.