Magnetic properties of ZnO diluted by Mn through a Monte Carlo Investigation

TL;DR

This study investigates the magnetic properties of Mn-doped ZnO semiconductors using Monte Carlo simulations with a Heisenberg Hamiltonian, revealing how carrier concentration influences ferromagnetism.

Contribution

It introduces a Monte Carlo approach to analyze Mn-doped ZnO's magnetic behavior considering carrier concentration effects, using the RKKY interaction model.

Findings

Magnetic properties depend on carrier concentration.

Monte Carlo data show convergence for different doping levels.

RKKY interaction effectively models the magnetic interactions.

Abstract

Diluted Magnetic Semiconductors (DMS) doped with a small concentration of magnetic impurities inducing ferromagnetic DMSs have attracted a lot of attention in the few last years. In particular, DMS based on III-V and II-VI semiconductors doped with transition metal are deeply investigated by both theoretical and experimental scientists for their promoting applications in spintronics. In this work, we present the magnetic properties of doped Mn ions in semi-conductor for different carrier's concentration. For the case of Zn1-xMnxO, the results of our calculations, dealt within Monte Carlo study using a Heisenberg Hamiltonian based on the RKKY interaction, show well converged MC data based on this Hamiltonian for different carrier concentrations.