Coulomb Drag and High Resistivity Behavior in Double Layer Graphene

TL;DR

This paper demonstrates how Coulomb drag in ultra-clean double layer graphene can be tuned via gate voltage to switch between conductive and highly resistive states, explaining previous experimental data.

Contribution

It introduces a method to control the resistivity of double layer graphene using Coulomb drag, providing insights into tunable electronic properties.

Findings

Coulomb drag can modulate the on/off current ratio in graphene.

Double layer graphene can be tuned from semi-metallic to highly resistive.

Results explain previous experimental observations in disordered substrates.

Abstract

We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.