Non Equilibrium Green's Function Analysis of Double Gate SiGe and GaAs Tunnel FETs

TL;DR

This paper models SiGe and GaAs tunnel FETs using the NEGF formalism, incorporating phonon scattering, and analyzes their electrical characteristics such as I-V curves and subthreshold slope.

Contribution

First application of NEGF formalism to model complete SiGe and GaAs tunnel FETs including phonon scattering effects.

Findings

Analyzed I-V characteristics and subthreshold slope.

Demonstrated the effectiveness of NEGF in nano-scale device modeling.

Abstract

In recent past extensive device simulation work has already been done on TFETs. Various ways have been suggested to model TFETs. In our paper we look at one such particular way to model these devices. The Non equilibrium green's formalism has proved effective in modeling nano scale devices. We model complete SiGe and GaAs tunnel FET for the first time using the NEGF formalism, also taking acoustic phonon scattering into account. We analyze them on the grounds of I-V curve, Ion-Ioff ration and subthreshold slope. The poisson equation and the equilibrium statistical mechanical equation has been solved by providing the potential profile.