Identification of main contributions to conductivity of epitaxial InN
T.A. Komissarova, O. Drachenko, V.N. Jmerik, X. Wang, A. Yoshikawa,, and S.V. Ivanov

TL;DR
This study investigates the various contributions affecting the electrical conductivity of epitaxial InN films, identifying the dominant roles of nanoparticles, near-interface, and bulk layers through high-field transport measurements.
Contribution
It provides a detailed analysis of the main factors influencing InN conductivity, highlighting the dominant contributions of nanoparticles, near-interface, and bulk layers, with surface effects being significant only in specific conditions.
Findings
In nanoparticles, near-interface, and bulk layers dominate conductivity
Surface layer influence is significant only in low-mobility Mg-doped InN
Transport parameters were determined using high-field Shubnikov-de Haas oscillations
Abstract
Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films.
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