Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene

TL;DR

This paper demonstrates that using boron nitride as a substrate significantly enhances the mobility of chemical vapor deposited graphene, making it comparable or superior to exfoliated graphene, thus addressing a key scalability challenge.

Contribution

The study shows that substrate choice, specifically boron nitride, is crucial for achieving high mobility in CVD graphene, surpassing previous limitations.

Findings

Achieved graphene mobility of 37,000 cm^2/Vs with boron nitride substrates.

Boron nitride substrates outperform traditional substrates in reducing carrier scattering.

High mobility CVD graphene is feasible with appropriate substrate engineering.

Abstract

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37,000 cm^2/Vs, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.