Universal intrinsic doping behavior of in-plane dc conductivity for hole-doped high-temperature cuprate superconductors

TL;DR

This paper reveals a universal exponential doping dependence of in-plane dc conductivity in all underdoped hole-doped high-temperature cuprate superconductors, linking it to quasiparticle behavior and constraining superconductivity mechanisms.

Contribution

It uncovers a true intrinsic and universal doping dependence of in-plane dc conductivity across all underdoped HTCSs, supported by high-resolution ARPES data.

Findings

Doping dependence of conductivity follows a simple exponential form.

Square of the nodal Fermi velocity aligns with the universal doping behavior.

Universal low-energy quasiparticle behavior in normal and superconducting states.

Abstract

Understanding the normal state transport properties in hole-doped high-temperature cuprate superconductors (HTCSs) is a challenging task which has been widely believed to be one of the key steps toward revealing the pairing mechanism of high-temperature superconductivity. Here, we present a true intrinsic and universal doping dependence of in-plane dc conductivity for all underdoped HTCSs. The doping dependence of in-plane dc conductivity normalized to that at optimal doping can be represented by a simple exponential formula. The doping behavior of the square of the nodal Fermi velocity derived by the high-resolution laser-based angle-resolved photoemission spectroscopy in the superconducting state follows reasonably well the universal intrinsic doping behavior. Our findings suggest a commonality of the low-energy quasiparticles both in the normal and superconducting states that place a true universal and stringent constraint on the mechanism of high-temperature superconductivity for HTCSs.