Coherent spectrum rearrangement in graphene: an additional nodal point and an impurity band appearance

TL;DR

This paper investigates how the spectrum of charge carriers in graphene changes with impurity concentration, revealing the formation of a new nodal point and an impurity band at a critical impurity level.

Contribution

It introduces the concept of spectrum rearrangement in graphene due to impurities, identifying a new nodal point and impurity band formation at a critical impurity concentration.

Findings

New nodal point forms in graphene spectrum.

Impurity band appears at critical impurity concentration.

Anomalous dispersion domain unfolds in the spectrum.

Abstract

It is demonstrated that a new nodal point is forming and a domain with anomalous dispersion is unfolding in the spectrum of charge carriers in graphene, when the concentration of weakly bound impurities exceeds a certain critical value.