Multilayer graphene under vertical electric field

TL;DR

This paper investigates how vertical electric fields influence the electronic properties of multilayer graphene, revealing modifications in band structure, bandgap induction, and optimal field conditions for electronic applications.

Contribution

It provides a detailed analysis of the effects of electric fields on multilayer graphene's electronic properties, including bandgap tuning in different stacking configurations.

Findings

E-field modifies effective mass, electron velocity, and density of states.

Finite bandgap is induced in even-layer ABA-stacking and all ABC-stacking graphene.

Optimal E-field for maximum bandgap is identified.

Abstract

We study the effect of vertical electric field (E-field) on the electronic properties of multilayer graphene. We show that the effective mass, electron velocity and density-of-state of a bilayer graphene are modified under the E-field. We also study the transformation of the band structure of multilayer graphenes. E-field induces finite (zero) bandgap in the even (odd)-layer ABA-stacking graphene. On the other hand, finite bandgap is induced in all ABC-stacking graphene. We also identify the optimum E-field to obtain the maximum bandgap in the multilayer graphenes. Finally we compare our results with the experimental results of a field-effect-transistor.