Electron spin coherence exceeding seconds in high purity silicon
Alexei M. Tyryshkin, Shinichi Tojo, John J. L. Morton, Helge Riemann,, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Thomas Schenkel,, Michael L. W. Thewalt, Kohei M. Itoh, and S. A. Lyon

TL;DR
This study demonstrates electron spin coherence times exceeding seconds in high-purity silicon, highlighting its potential for quantum computing and memory applications due to exceptionally long coherence lifetimes.
Contribution
It provides the first detailed analysis of multiple decoherence mechanisms in silicon donors and achieves record-long electron spin coherence times in solid-state systems.
Findings
Electron spin $T_2$ up to 2 seconds in silicon.
Suppression of decoherence via magnetic field gradients.
Coherence times comparable to high-vacuum qubits.
Abstract
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than what can be achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in very pure Si material, with a residual Si concentration of less than 50 ppm and donor densities of per cm. We elucidate three separate mechanisms for spin decoherence, active at different…
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