Microwave-induced Hall resistance in bilayer electron systems
S. Wiedmann, G. M. Gusev, O. E. Raichev, S. Kr\"amer, A. K. Bakarov,, and J. C. Portal

TL;DR
This paper experimentally investigates how microwave irradiation affects Hall and dissipative resistance in bilayer electron systems, revealing symmetry deviations and complex dependencies on microwave power and polarization.
Contribution
It provides new experimental insights into microwave-induced Hall resistance behavior and its deviation from expected symmetry, challenging existing theoretical models.
Findings
Microwave-induced Hall resistance shows deviation from odd symmetry under magnetic field reversal.
Dissipative resistance remains symmetric under magnetic field reversal.
Hall resistance exhibits strong dependence on microwave power and polarization.
Abstract
The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic field reversal in the microwave-induced Hall resistance whereas the dissipative resistance obeys even symmetry. Studies of as a function of the microwave electric field and polarization exhibit a strong and non-trivial power and polarization dependence. The obtained results are discussed in connection to existing theoretical models of microwave-induced photoconductivity.
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