Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene

TL;DR

This paper demonstrates how applying a perpendicular electric field to dual-gated bilayer graphene can significantly enhance its thermoelectric power at low temperatures, opening new avenues for graphene-based thermoelectric devices.

Contribution

It introduces a method to electrically tune and enhance thermoelectric power in bilayer graphene via band-gap opening with a dual-gate setup.

Findings

Large thermoelectric power enhancement at low temperatures.

Electric field tuning effectively controls thermoelectric properties.

Potential for low-temperature thermoelectric applications.

Abstract

Thermoelectric power of a material, typically governed by its band structure and carrier density, can be varied by chemical doping that is often restricted by solubility of the dopant. Materials showing large thermoelectric power are useful for many industrial applications, such as the heat-to-electricity conversion and the thermoelectric cooling device. Here we show a full electric field tuning of thermoelectric power in a dual-gated bilayer graphene device resulting from the opening of a band-gap by applying a perpendicular electric field on bilayer graphene. We uncover a large enhancement in thermoelectric power at low temperature, which may open up a new possibility in low temperature thermoelectric application using graphene-based device.