Voltage controlled terahertz transmission through GaN quantum wells
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y., Cordier, M. Chmielowska, S. Chenot, JP Faurie, B. Beaumont, P. Shiktorov, E., Starikov, V. Gruzinskis, V. Korotyevyev, V. Kochelap
TL;DR
This study demonstrates voltage-controlled terahertz transmission through GaN quantum wells, showing significant enhancement with applied voltage, supported by experimental measurements and a phenomenological theoretical model.
Contribution
It provides new experimental data and a theoretical explanation for voltage-induced transmission enhancement in GaN quantum wells at terahertz frequencies.
Findings
Transmission increases significantly with applied voltage.
The enhancement correlates with changes in differential mobility.
Results are consistent with the phenomenological model.
Abstract
We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement to changes in the differential mobility of the two-dimensional electron gas.
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