Black Silicon with high density and high aspect ratio nanowhiskers

TL;DR

This paper investigates the physical properties and formation mechanisms of black silicon with high-density, high-aspect-ratio nanowhiskers, highlighting their optical, electrical, and structural characteristics for potential applications.

Contribution

It provides detailed structural, optical, and electrical analysis of high-density nanowhiskers on black silicon, elucidating their formation and properties.

Findings

Nanowhiskers are crystalline with a thin Si oxide layer.

Strong photoluminescence observed in visible and infrared.

Field emission properties depend on tip shape.

Abstract

Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which are promising for a variety of applications. The b-Si consisting of high density and high aspect ratio sub-micron length whiskers or pillars with tip diameters of well under 3 nm exhibits strong photoluminescence (PL) both in visible and infrared, which are interpreted in conjunction with defects, confinement effects and near band-edge emission. Structural analysis indicate that the whiskers are all crystalline and encapsulated by a thin Si oxide layer. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicates that disorder induced LO-TO optical mode coupling can be an effective tool in assessing structural quality of the b-Si. The same phonons are likely coupled to electrons in visible region PL transitions. Field emission properties of these nanoscopic features are demonstrated indicating the influence of the tip shape on the emission. Overall properties are discussed in terms of surface morphology of the nano whiskers.