Explicit drain current, charge and capacitance model of graphene field-effect transistors

TL;DR

This paper introduces a compact, physics-based model for the drain current, charge, and capacitance of graphene FETs, facilitating analysis of their DC, AC, and transient behaviors in circuits.

Contribution

It provides the first explicit, closed-form expressions for graphene FET drain current, charge, and capacitances across all operation regions based on a physical drift-diffusion framework.

Findings

Explicit drain current model derived

Closed-form charge and capacitance expressions

Applicable for analog and RF applications

Abstract

I present a compact physics-based model of the drain current, charge and capacitance of graphene field-effect transistors, of relevance for exploration of DC, AC and transient behavior of graphene based circuits. The physical framework is a field-effect model and drift-diffusion carrier transport incorporating saturation velocity effects. First, an explicit model has been derived for the drain current. Using it as a basis, explicit closed-form expressions for the charge and capacitances based on the Ward-Dutton partition scheme, covering continuosly all operation regions. The model is of special interest for analog and radio-frequency applications where bandgap engineering of graphene could be not needed.