Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride

TL;DR

This study demonstrates that using hexagonal boron nitride as a substrate significantly enhances the electrical performance of CVD-assembled graphene FETs, making them comparable to exfoliated graphene devices.

Contribution

It shows that h-BN improves the electrical properties of CVD graphene FETs, enabling large-area carbon electronics with performance similar to exfoliated graphene.

Findings

Transconductance increased 8.5 times on h-BN

Carrier mobility improved 4 times on h-BN

CVD graphene on h-BN has comparable performance to exfoliated graphene

Abstract

We investigate key electrical properties of monolayer graphene assembled by chemical-vapor-deposition (CVD) as impacted by supporting substrate material. Graphene field-effect transistors (GFETs) were fabricated with carbon channel placing directly on hexagonal boron nitride (h-BN) and SiO2, respectively. Small-signal transconductance (gm) and effective carrier mobility ({\mu}eff) are improved by 8.5 and 4 times on h-BN, respectively, as compared with that on SiO2. Compared with GFET with exfoliated graphene on SiO2, gm and {\mu}eff measured from device with CVD graphene on h-BN substrate exhibits comparable values. The experiment demonstrates the potential of employing h-BN as a platform material for large-area carbon electronics.