Development of Active Pixel Photodiode Sensors for Gamma Camera Application
Nur Sultan Salahuddin (1,2), Michel Paindavoine (1), Brahmantyo, Heruseto (2), Michel Parmentier (3) ((1) University of Burgundy, (2), Gunadarma University, (3) University of Franche-Comte)
TL;DR
This paper presents the design and fabrication of novel active pixel photodiode sensors with high fill factor and logarithmic response, suitable for advanced gamma camera applications.
Contribution
It introduces new CMOS-based photodiode sensors with integrated current mirror amplifiers tailored for gamma camera use, demonstrating high sensitivity and low-light detection capabilities.
Findings
Sensors have 98% fill factor and small chip area
Photodiodes detect very low blue light levels (<0.5 lux)
Suitable for solid-state gamma camera applications
Abstract
We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The Photodiode areas are respectiveley 1mm x 1mm and 0.4mm x 0.4mm with fill factor 98 % and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new Gamma Camera solid-state concept.
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Taxonomy
TopicsAdvanced Semiconductor Detectors and Materials · CCD and CMOS Imaging Sensors · Infrared Target Detection Methodologies