Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

TL;DR

This paper demonstrates RF readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs at cryogenic temperatures, enabling high-bandwidth and potentially time-resolved spin resonance detection in semiconductor devices.

Contribution

First demonstration of RF reflectometry for EDMR in Si:P MOSFETs, revealing hyperfine lines and effects of microwave power and biasing conditions.

Findings

Observation of Si:P hyperfine lines using RF reflectometry

Dependence of EDMR signals on microwave power

Influence of MOSFET biasing conditions on signals

Abstract

We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.