Graphene p-n junction Arrays as Quantum-Hall Resistance Standards

TL;DR

This paper presents a novel graphene-based quantum Hall resistance standard using p-n junction arrays, leveraging graphene's ambipolarity to simplify fabrication and achieve precise resistance measurements.

Contribution

It introduces a new device concept for resistance standards using graphene p-n junction arrays, avoiding complex interconnect technology required in traditional systems.

Findings

Longitudinal resistance vanishes across p-n junctions at relevant current levels

Series quantum Hall resistors fabricated without complex multi-layer interconnects

Demonstrates feasibility of graphene-based quantum resistance standards

Abstract

We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistance standard we confirm the vanishing of longitudinal resistance across a p-n junction for metrological relevant current levels in the range of a few \muA.