Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser

TL;DR

This paper reports the development of an electrically pumped quantum dot photonic crystal nanocavity laser with record-low thresholds, operating at temperatures up to 150 K, advancing practical low-power laser sources for optical applications.

Contribution

It introduces a novel electrically pumped quantum dot photonic crystal nanocavity laser with the lowest thresholds ever recorded, using a lateral p-i-n junction in gallium arsenide.

Findings

Threshold of 181 nA at 50 K

Threshold of 287 nA at 150 K

Continuous wave lasing up to 150 K

Abstract

Efficient, low threshold, and compact semiconductor laser sources are being investigated for many applications in high-speed communications, information processing, and optical interconnects. The best edge-emitting and vertical cavity surface-emitting lasers (VCSELs) have thresholds on the order of 100 \muA[1,2] but dissipate too much power to be practical for many applications, particularly optical interconnects[3]. Optically pumped photonic crystal (PC) nanocavity lasers represent the state of the art in low-threshold lasers[4,5]; however, in order to be practical, techniques to electrically pump these structures must be developed. Here we demonstrate a quantum dot photonic crystal nanocavity laser in gallium arsenide pumped by a lateral p-i-n junction formed by ion implantation. Continuous wave lasing is observed at temperatures up to 150 K. Thresholds of only 181 nA at 50 K and 287 nA at 150 K are observed - the lowest thresholds ever observed in any type of electrically pumped laser.