Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors
Blaise Mouttet
TL;DR
This paper develops equations for set, reset, and retention times in mem-resistors using a dynamic model based on a driven damped harmonic oscillator, enhancing understanding of their switching behavior.
Contribution
It derives analytical expressions for key timing parameters of mem-resistors from a previously proposed oscillator-based model.
Findings
Derived equations for set, reset, and retention times.
Provided insights into the switching dynamics of mem-resistors.
Enhanced predictive capability for mem-resistor behavior.
Abstract
A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives equations for set, reset, and retention times based on the previously proposed model. Keywords- mem-resistor, RRAM, ReRAM
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices