Disorder induced metallicity in amorphous graphene
E.Holmstrom, J. Fransson, O. Eriksson, R. Lizarraga, B. Sanyal, M. I., Katsnelson

TL;DR
This paper predicts that introducing sufficient disorder into graphene transforms it from a semiconductor to a metal, potentially enabling new applications like transparent conductors.
Contribution
It demonstrates a first-principles method to induce and analyze metallicity in amorphous graphene through disorder.
Findings
Disorder induces a transition to metallic behavior in graphene.
Amorphous graphene consists of nanopatches connected by disordered rings.
Minimal buckling observed due to averaging of in-plane stresses.
Abstract
We predict a transition to metallicity when a sufficient amount of disorder is induced in graphene. Calculations were performed by means of a first principles stochastic quench method. The resulting amorphous graphene can be seen as nanopatches of graphene that are connected by a network of disordered small and large carbon rings. The buckling is minimal and we believe that it is a result of averaging of counteracting random in-plane stress forces. The linear response conductance is obtained by a model theory as function of lattice distortions. Such metallic behaviour is a much desired property for functionalisation of graphene to realize a transparent conductor, e.g. suitable for touch-screen devices.
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