Electronic structure and magnetic properties of epitaxial FeRh(001) ultra-thin films on W(100)
J.-S. Lee, E. Vescovo, L. Plucinski, C. M. Schneider, and C.-C. Kao

TL;DR
This study investigates the electronic and magnetic properties of epitaxial FeRh(001) ultra-thin films on W(100), confirming a temperature-induced AF to FM transition with minimal electronic structure change, and compares experimental results with theoretical calculations.
Contribution
It provides experimental evidence of the AF-FM transition in ultra-thin FeRh films and compares their electronic structure with theoretical models.
Findings
Confirmation of the AF-FM transition via photoemission dichroism.
Large magnetic moment on Fe atoms remains unchanged across phases.
Electronic structure shows minimal change during the transition.
Abstract
Epitaxial FeRh(100) films (CsCl structure, thick), prepared {\it in-situ} on a W(100) single crystal substrate, have been investigated via valence band and core level photoemission. The presence of the temperature-induced, first-order, antiferromagnetic to ferromagnetic (AF FM) transition in these films has been verified via linear dichroism in photoemission from the Fe 3 levels. Core level spectra indicate a large moment on the Fe atom, practically unchanged in the FM and AF phases. Judging from the valence band spectra, the metamagnetic transition takes place without substantial modification of the electronic structure. In the FM phase, the spin-resolved spectra compare satisfactorily to the calculated spin-polarized bulk band structure.
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