Decisive role of oxygen vacancy in ferroelectric vs. ferromagnetic Mn-doped BaTiO3 thin films

TL;DR

This study investigates how oxygen vacancies influence ferroelectricity and ferromagnetism in Mn-doped BaTiO3 thin films, revealing that oxygen partial pressure controls the magnetic and electric properties through defect formation.

Contribution

It demonstrates the decisive role of oxygen vacancies in determining ferroelectric and ferromagnetic behaviors in Mn-doped BaTiO3 thin films, confirming theoretical predictions.

Findings

Ferroelectricity occurs only at high oxygen partial pressure.

Ferromagnetism appears at low oxygen partial pressure due to oxygen vacancies.

Oxygen vacancies facilitate bound magnetic polaron formation.

Abstract

Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a low leakage current, increased dielectric loss, and a decreased dielectric constant. Ferromagnetism is seen on Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure and is attributed to the formation of bound magnetic polarons (BMPs). This BMP formation is enhanced by oxygen vacancies. The present work confirms a theoretical work from C. Ederer and N. Spaldin on ferroelectric perovskites [Nature Mat. 3, 849 (2004)] which shows that the existence of ferroelectricity is incompatible with the existence of a spontaneous magnetization in Mn-doped BaTiO3 thin films.