Circularly polarized electroluminescence from silicon nanostructures heavily doped with boron

TL;DR

This study investigates the generation of circularly polarized electroluminescence from heavily boron-doped silicon nanostructures, revealing temperature and current-dependent polarization linked to exciton recombination at boron centers.

Contribution

It demonstrates for the first time the emission of circularly polarized light from silicon nanostructures doped with boron, highlighting the role of negative-U dipole centers in polarization.

Findings

CPEL depends on temperature and current levels.

Polarization arises from exciton recombination at boron centers.

Emission occurs in silicon quantum wells with heavily doped barriers.

Abstract

The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a function of temperature and excitation levels. The CPEL dependences on the forward current and temperature show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW {\delta}-barriers interface.