Towards wafer scale fabrication of graphene based spin valve devices

TL;DR

This paper demonstrates successful spin injection, transport, and detection in wafer-scale graphene devices, showing that CVD-grown graphene can be used for large-scale spintronic applications with relaxation times comparable to exfoliated samples.

Contribution

It presents the first demonstration of wafer-scale CVD graphene for spintronic devices, showing comparable spin relaxation times to exfoliated graphene.

Findings

Spin relaxation times are comparable to exfoliated graphene.

CVD structural features do not limit spin transport.

Wafer-scale CVD graphene is promising for spintronics.

Abstract

We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that CVD specific structural differences such as nano-ripples and grain boundaries do not limit spin transport in the present samples. Our observations make Cu-CVD graphene a promising material of choice for large scale spintronic applications.