Decoherence and Quantum Interference assisted electron trapping in a quantum dot

TL;DR

This paper introduces a theoretical model demonstrating how decoherence and quantum interference can significantly enhance electron trapping efficiency in a quantum dot system, even at room temperature.

Contribution

The study presents a new theoretical approach showing increased electron trapping probabilities due to decoherence and quantum interference effects in a semiconductor nanoring.

Findings

Electron trapping probability with no decoherence is 27%.

Decoherence increases trapping probability to 70% at 100 K.

Trapping probability remains substantial (~58%) at 300 K.

Abstract

We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 K and 300 K. The electron's dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction (ELOPI). Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100 K, 63% at 200 K and 58% at 300 K. Our model provides a novel method of trapping an electron at room temperature.