Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping

TL;DR

This paper demonstrates a novel electrostatic doping method to create complementary-like graphene logic gates, overcoming ambipolar limitations and enabling high-speed nanoelectronic logic circuits with improved switching ratios.

Contribution

Introduces a simple electrostatic doping technique to form complementary-like graphene logic gates, including NOR and NAND, with potential extension to other ambipolar semiconductors.

Findings

Successfully demonstrated complementary-like NOR and NAND gates.

Enhanced switching ratio through band gap introduction.

Electrostatic doping controls charge neutrality points effectively.

Abstract

Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devices with the conventional complementary architecture. Using electrostatic doping modulation, we show here a facile method to control the charge neutrality points and form a complementary-like structure, in which the ambipolar conduction is used as a benefit rather than a drawback to construct logic devices. A band gap is also introduced in the channels to improve the switching ratio of the graphene transistors. For the first time, complementary-like NOR and NAND logic gates were demonstrated. This method provides a possible route for logic circuits from ambipolar graphene and, in principle, can be also extended to other ambipolar semiconductors, such as organic compounds and carbon nanotube thin films.