Photon echo quantum memories in inhomogeneously broadened two level atoms
D. L. McAuslan, P. M. Ledingham, W. R. Naylor, S. E. Beavan, M. P., Hedges, M. J. Sellars, and J. J. Longdell

TL;DR
This paper introduces a solid-state quantum memory technique utilizing photon echo methods with external broadening fields, enabling operation in various materials without spectral holeburning, supported by theory, simulations, and initial experiments.
Contribution
It presents a novel photon echo quantum memory approach that avoids spectral holeburning and broadens material applicability, supported by analytic, numerical, and experimental evidence.
Findings
Memory operates efficiently without spectral holeburning
External broadening fields enable control over atom-light interaction
Initial experiments demonstrate feasibility
Abstract
Here we propose a solid-state quantum memory that does not require spectral holeburning, instead using strong rephasing pulses like traditional photon echo techniques. The memory uses external broadening fields to reduce the optical depth and so switch off the collective atom-light interaction when desired. The proposed memory should allow operation with reasonable efficiency in a much broader range of material systems, for instance Er3+ doped crystals which have a transition at 1.5 um. We present analytic theory supported by numerical calculations and initial experiments.
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