New Synthesis Method for the Growth of Epitaxial Graphene

TL;DR

This paper introduces a novel 'face-to-face' synthesis method for high-quality, large-area epitaxial graphene, demonstrating improved structural quality and controllable thickness, advancing its potential for electronic applications.

Contribution

The paper presents a new synthesis technique for epitaxial graphene that yields larger, higher-quality domains with controllable thickness, surpassing conventional methods.

Findings

Samples exhibit better quality and larger size than traditional methods.

Graphene thickness can be controlled by annealing temperature.

Characterization confirms high structural quality.

Abstract

As a viable candidate for an all-carbon post-CMOS electronics revolution, epitaxial graphene has attracted significant attention. To realize its application potential, reliable methods for fabricating large-area single-crystalline graphene domains are required. A new way to synthesize high quality epitaxial graphene, namely "face-to-face" method, has been reported in this paper. The structure and morphologies of the samples are characterized by low-energy electron diffraction, atomic force microscopy, angle-resolved photoemission spectroscopy and Raman spectroscopy. The grown samples show better quality and larger length scales than samples grown through conventional thermal desorption. Moreover the graphene thickness can be easily controlled by changing annealing temperature.