Monte-Carlo Simulations of Electron Channelling: a Bent (110) Channel in Silicon

TL;DR

This paper introduces a new Monte-Carlo simulation code to study electron channeling in bent silicon crystals, analyzing how bending affects dechanneling length and acceptance.

Contribution

The paper presents a novel Monte-Carlo code ChaS for simulating electron channeling in bent silicon, providing new insights into the effects of crystal bending.

Findings

Dechanneling length varies with crystal bending.

Acceptance of the channel depends on bending radius.

Simulation results align with experimental data.

Abstract

Results obtained with a new Monte-Carlo code ChaS for channeling of 855 MeV electrons along the crystallographic plane (110) in a bent silicon crystal are presented. The dependence of the dechanneling length and the asymptotic acceptance of the channel on the crystal bending is studied.