Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation

TL;DR

This study demonstrates that ion implantation can effectively tune the magnetoresistance in suspended graphitic multilayers by inducing defects, revealing the significance of non-Markovian transport processes in these materials.

Contribution

It introduces a method to control magnetoresistance in graphitic multilayers via ion implantation, highlighting the role of non-Markovian transport phenomena.

Findings

Ion implantation switches MR from positive to negative.

Defects significantly alter electronic transport behavior.

Supports non-Markovian transport theory in graphitic systems.

Abstract

We report a tunable magnetoresistance (MR) behavior in suspended graphitic multilayers through point defect engineering by ion implantation. We find that ion implantation drastically changes the MR behavior: the linear positive MR in pure graphitic multilayers transforms into a negative MR after introducing significant short-range disorders (implanted boron or carbon atoms), consistent with recent non-Markovian transport theory. Our experiments suggest the important role of the non-Markovian process in the intriguing MR behavior for graphitic systems, and open a new window for understanding transport phenomena beyond the Drude-Boltzmann approach and tailoring the electronic properties of graphitic layers.