Theory of the ultrafast mode-locked GaN lasers in a large-signal regime

TL;DR

This paper develops an analytical theory for high-power, passively mode-locked GaN lasers that operate at pulse energies exceeding the absorber's saturation energy, providing insights into their performance.

Contribution

It introduces a novel mode-locking master equation solution in the pulse energy domain, applicable to high-energy regimes previously unaddressed.

Findings

Validates the model for sub-picosecond blue-violet GaN lasers at high power

Provides analytical predictions of laser performance in large-signal regimes

Enhances understanding of pulse dynamics beyond saturation energy

Abstract

Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by solving the mode-locking master equation in the pulse energy-domain representation. The performances of monolithic sub-picosecond blue-violet GaN mode-locked diode laser in the high-power operation regime are analyzed using the developed approach.