Optical Study of GaAs quantum dots embedded into AlGaAs nanowires
V.N. Kats, V.P. Kochereshko, A.V. Platonov, T.V. Chizhova, G.E., Cirlin, A.D. Bouravleuv, Yu.B. Samsonenko, I.P. Soshnikov, E.V. Ubyivovk, J., Bleuse, and H. Mariette
TL;DR
This study investigates the optical properties of GaAs quantum dots within AlGaAs nanowires using photoluminescence techniques, revealing effects of size distribution and crystalline phases on their optical behavior.
Contribution
It provides new insights into the optical characterization of embedded GaAs quantum dots in nanowires, highlighting the impact of structural variations.
Findings
Size distribution affects photoluminescence spectra
Presence of multiple crystalline phases influences optical properties
Single quantum dot measurements reveal detailed emission characteristics
Abstract
We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported. The influence of the diameter sizes distribution is evidenced in the optical spectroscopy data together with the presence of various crystalline phases in the AlGaAs nanowires.
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