Electron Transfer between Weakly Coupled Concentric Quantum Rings

TL;DR

This paper investigates electron transfer mechanisms in weakly coupled concentric quantum rings under magnetic fields, revealing how level anti-crossing facilitates electron tunneling, with numerical simulations demonstrating these effects in various geometries.

Contribution

It introduces a detailed analysis of electron transitions in weakly coupled double concentric quantum rings, highlighting the role of level anti-crossing in electron tunneling.

Findings

Electron level anti-crossing enables electron transfer between rings.

Numerical simulations confirm tunneling in different geometries.

Central quantum dot influences electron transition behavior.

Abstract

The electronic structure of the semiconductor double concentric quantum nano-ring (DCQR) is studied under the single sub-band effective mass approach. We show that in the weakly coupled DCQR, that has been placed in transverse magnetic field, the electron spatial transition between the rings can occur due to electron level anti-crossing. The anti-crossing of the levels with different radial quantum numbers provides the conditions when the electron tunneling between rings becomes possible. Results of numerical simulation for the electron transition are presented for DCQRs of different geometry. In particularly, the system of a QR with a QD located at center of this QR is considered.