A Backscattering Model Incorporating the Effective Carrier Temperature in Nano MOSFET

TL;DR

This paper introduces a backscattering model for nano MOSFETs that accounts for increased carrier temperature at the potential barrier, improving accuracy in high inversion regimes through simulation validation.

Contribution

The authors extend previous backscattering models by incorporating effective carrier temperature, capturing energy dissipation effects in nano MOSFETs.

Findings

Model accurately predicts carrier behavior in high inversion regimes.

Inclusion of carrier temperature improves model accuracy.

Simulations validate the importance of temperature effects in nanoscale devices.

Abstract

In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the same authors which highlighted the importance of considering the partially ballistic transport between the source contact and the top of the potential energy barrier in the channel. The increase of carrier temperature is precisely due to energy dissipation between the source contact and the top of the barrier caused by the high saturation current. To support our discussion, accurate 2D full band Monte Carlo device simulations with quantum correction have been performed in double gate nMOSFETs for different geometries (gate length down to 10 nm), biases and lattice temperatures. Including the effective carrier temperature is especially important to properly treat the high inversion regime, where previous backscattering models usually fail.